On 7th November, Hiroyuki Matsukawa (M1), Department of Electrical Engineering and Information Systems, received 2025 IWDTF Young Researcher Award.
2025 IWDTF Young Researcher Award
The IWDTF Young Researcher Award is presented to young researchers who have delivered outstanding research presentations at the International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF).
About awarded research
Hiroyuki Matsukawa, a first-year master’s student in Toprasertpong Laboratory, Department of Electrical Engineering, received the IWDTF Young Researcher Award at the International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF) held in Sendai from November 5 to 7, 2025.
Authors: Hiroyuki Matsukawa, Mitsuru Takenaka, Shinichi Takagi, Kasidit Toprasertpong
Presentation Title: C–V characteristics of ferroelectric Hf1-xZrxO2: Impact of voltage sweep speed
This presentation systematically clarified the dependence of the C-V characteristics of ferroelectric HZO on voltage sweep speed. It was found that the dielectric constant increases under faster voltage sweeps, suggesting a dynamic response of ferroelectric domains as the underlying mechanism. These findings significantly contribute to the development of high-permittivity materials for advanced semiconductor memory applications.
Your impression & future plan
Based on the insights gained from this study, we will continue material engineering to explore new concepts for semiconductor memory devices. We aim to further advance research on both the fundamental understanding of ferroelectric materials and their device applications.
Masafumi Komiya (M1), Department of Nuclear Engineering and Management, recieved Young Researcher Award at ICCCI2025
Riku Kobayashi (M1) , Department of Electrical Engineering and Information Systems, received IEEE WPTCE 2025, Best Student Paper Award
