Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy



Keisuke Minehisa, Ryo Murakami, Hidetoshi Hashimoto, Kaito Nakama, Kenta Sakaguchi, Rikuo Tsutsumi, Takeru Tanigawa, Mitsuki Yukimune, Kazuki Nagashima, Takeshi Yanagida, Shino Sato, Satoshi Hiura, Akihiro Murayama and Fumitaro Ishikawa


GaAs/AlGaAs core–shell nanowires, typically having 250 nm diameter and 6 μm length, were grown on 2-inch Si wafers by the single process of molecular beam epitaxy using constituent Ga-induced self-catalysed vapor–liquid–solid growth. The growth was carried out without specific pre-treatment such as film deposition, patterning, and etching. The outermost Al-rich AlGaAs shells form a native oxide surface protection layer, which provides efficient passivation with elongated carrier lifetime. The 2-inch Si substrate sample exhibits a dark-colored feature due to the light absorption of the nanowires where the reflectance in the visible wavelengths is less than 2%. Homogeneous and optically luminescent and adsorptive GaAs-related core–shell nanowires were prepared over the wafer, showing the prospect for large-volume III–V heterostructure devices available with this approach as complementary device technologies for integration with silicon.




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