A novel method for generating p-type wide- and ultrawide-bandgap III-nitride by doping with magnetic elements
A. Masago, H. Shinya, T. Fukushima, K. Sato, H. Katayama-Yoshida
Abstract We propose a novel method to generate p-type conduction and low resistivity in wide- and ultrawide-bandgap III-nitride semiconductors via doping of a magnetic element. This method is based on the energetic competition between the covalency of the magnetic element and the ligand nitrogen atoms and the exchange-correlation energy of the magnetic impurity. Using magnetic elements with large exchange-correlation energy, we can obtain p-type wide- and ultrawide-bandgap semiconductors, which are basically difficult to synthesize due to the unipolarity.