Mr. Issei Sasaki and Prof. Takuya Maeda from the University of Tokyo, in collaboration with the researchers at Basic Research Laboratories, NTT Inc. have successfully demonstrated AlN-based Schottky barrier diodes with extremely low on-resistance. The fabricated devices feature a graded AlGaN drift layer with distributed polarization doping, a Si-doped graded AlGaN interlayer, and an AlN/AlGaN superlattice current-spreading layer. These devices achieved a specific on-resistance of 0.34 mΩ·cm², the lowest value ever reported for AlN-based electronic devices. Furthermore, they demonstrated a high breakdown voltage of 400 V and a maximum breakdown electric field of 8 MV/cm.
These results showcase the immense potential of AlN-based materials for energy-efficient power semiconductor devices, contributing to the realization of next-generation power electronics for a carbon-neutral society.
Papers
Conference: The 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2026)
Title: Extremely Low ON-Resistance AlN-based SBDs with Distributed Polarization Doping Drift Layer
Authors: I. Sasaki, M. Hiroki, K. Ebata, K. Hirama, Y. Taniyasu, T. Maeda
URL: https://ispsd2026.com
※Proceedings will be published in IEEE Xplore digital library in August 2026