Authors
Kaito Nakama, Mitsuki Yukimune, Naohiko Kawasaki, Akio Higo, Satoshi Hiura, Akihiro Murayama, Mattias Jansson, Weimin M.Chen, Irina A.Buyanova, and Fumitaro Ishikawa
Abstract
Semiconducting nanowires (NWs) fabricated from III–V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The NWs are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates with SiO2 mask holes. The nucleation and growth of the GaAs nanowires' core are carried out by Ga-induced vapor–liquid–solid growth at the open holes. Finely controlled, vertically aligned, regular core-multishell NWs with uniform wire length and diameter are obtained with a 96% yield and targeted nitrogen concentrations of 0%, 2%, and 3%. The GaInNAs NWs exhibit a spectral red shift relative to the GaAs NWs' peak. Their emission wavelength increases with the N content reaching up to 1.26 μm, which makes them a promising tool in telecommunication light sources.
Applied Physics Letters: https://doi.org/10.1063/5.0160080
