On 5th December 2022, Associate Professor Masaharu Kobayashi, d.lab/Institute of Industrial Science, and his research
group received the IEEE EDS Paul Rappaport Award for the research of monolithic integration of oxide semiconductor FETs and ferroelectric capacitors for 3D embedded memory application.
IEEE Paul Rappaport Award
This award was established in 1984. The award is presented to the authors of the best paper of IEEE Transactions on Electron Devices in the year. This achievement will pave the way to the high-density and high-bandwidth embedded memory for high energy-efficient computing.
Paul Rappaport Award：https://eds.ieee.org/awards/paul-rappaport-award