Associate Professor Masaharu Kobayashi and his research group received 1st IEEE EDS Leo Esaki Award.
Prof. Kobayashi, d.lab/Institute of Industrial Science, and his research group received the 1st IEEE EDS Leo Esaki Award for the research of ferroelectric tunnel junction memory based on next-generation ferroelectric material on December 14th, 2020. This award is named after Prof. Leo Esaki, who is a Nobel Prize winner in physics, and established in 2019. The award is presented to the authors of the best paper in the year. Prof. Kobayashi and his research group are honored to receive the 1st award. This achievement will pave the way to the next generation memory in big-data era.