Mitsubishi Electric and the University of Tokyo Reveal New Mechanism for Enhancing Reliability of SiC Power Semiconductor Devices



TOKYO, December 4, 2018Mitsubishi Electric Corporation (TOKYO: 6503) and the University of Tokyo announced today what they believe to be an all-new mechanism for enhancing the reliability of silicon carbide (SiC) power semiconductor devices in power electronics systems. The new mechanism was realized as a result of confirming that sulfur beneath the interface of gate oxide and SiC captures some of the electrons conducting in the device’s current path, which increases the threshold voltage without changing the device’s on-resistance. The mechanism is expected to lead to more reliable power electronics equipment offering superior tolerance to electro-magnetic noise, which is known to cause system malfunctions.

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