Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Authors

Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa,Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, and Mitsuru Takenaka

Abstract

A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as BaTiO₃ offer nonvolatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor fabs is limited. Hf_0.5Zr_0.5O₂ is an emerging ferroelectric material, which exhibits complementary metal-oxide-semiconductor compatibility. Although extensively studied for ferroelectric transistors and memories, its application to photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric Hf_0.5Zr_0.5O₂. We observed a negative change in refractive index at a 1.55 μm wavelength in a pristine device regardless of the direction of the applied electric field. The nonvolatile phase shift was only observed once in a pristine device. This non-reversible phase shift can be attributed to the spontaneous polarization within the Hf_0.5Zr_0.5O₂ film along the external electric field.

Nature communications: https://www.nature.com/articles/s41467-024-47893-2