Issei Sugiyama, Department of of Materials Engineering, won a 28th Advanced technology award

Issei Sugiyama in the Department of of Materials Engineering, won a 28th Advanced technology award.

<About awarded research>

Awarded paper "Developing atomic scale permanent magnet using the dislocations in antiferromagnetic materials."
Miniaturizing magnetic devices to the atomic scale causes some serious problems. For example, the direction of magnetization becomes unstable and easy to be switched. To solve this problem, we have developed a technique to use dislocations. Dislocations are one dimensional lattice defects in crystals, and show local specific magnetic properties. We found the dislocations in antiferromagnetic NiO show ferromagnetic property, and magnetic field over 4 T is required to switch the direction of magnetization at the dislocations. By combining advanced electron microscopy techniques and theoretical calculations performed on super computer, we have succeeded to reveal the magnetic proeprty at the dislocations are according to the local nickel deficiency at the dislocation cores. By utilizing these results, atomi scale magnetic devices or magnetic media will be able to be fabricated.

<Comments>

I am really happy to receive such a honorable prize.