Press Releases

Le Duc Anh, Kengo Takase, Takahiro Chiba, Yohei Kota, Kosuke Takiguchi, Masaaki Tanaka.

α-Sn provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, the realization of high-quality α-Sn remains a challenge, which limits the understanding of its quantum transport properties and device applications. Here, epitaxial growth of α-Sn on InSb (001) with the highest quality thus far is presented. The studied samples exhibit unprecedentedly high quantum mobilities of both the surface state (30 000 cm2 V−1 s−1), which is ten times higher than the previously reported values, and the bulk heavy-hole state (1800 cm2 V−1 s−1), which is never obtained experimentally. These excellent features allow quantitative characterization of the nontrivial interfacial and bulk band structure of α-Sn via a thorough investigation of Shubnikov–de Haas oscillations combined with first-principles calculations. The results firmly identify that α-Sn grown on InSb (001) is a topological Dirac semimetal (TDS). Furthermore, a crossover from the TDS to a 2D topological insulator and a subsequent phase transition to a trivial insulator when varying the thickness of α-Sn are demonstrated. This work indicates that α-Sn is an excellent model system to study novel topological phases and a prominent material candidate for topological devices.

Advanced Materials :