On 24th March, Lecturer Takuya Maeda, Electrical Engineering and Information Systems, recieved Funai Research Award for Young Scientist.
Funai Research Award for Young Scientist
The research award is given to the young researcher who contribute to progress of the information technology and information science.
About awarded research
Award Title: "Elucidation of High Electric Field Properties of Nitride Wide Bandgap Semiconductors for Next-Generation Power Devices"
Prof. Takuya Maeda has been conducting research on the high electric field properties of wide bandgap semiconductors, such as gallium nitride (GaN), which is known as a key material for power semiconductor devices. His achievements include the demonstration of nearly ideal avalanche breakdown in GaN p-n junctions, the elucidation of the impact ionization coefficients in GaN using a novel measurement method based on high-field optical absorption, clarification of the saturation drift velocity of two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunctions, and the elucidation of high-field electron transport mechanisms in aluminum nitride (AlN)-based Schottky barrier diodes. These accomplishments represent internationally distinguished research results in the field.
Your impression & future plan
I am truly honored to receive such a prestigious award. I would like to express my sincere gratitude to the professors who have guided me since my student days, my research collaborators, and all the students involved. Moving forward, I will continue to explore the high electric field properties of wide bandgap semiconductors, and I aim to enhance device performance and propose innovative devices based on a deeper understanding of these materials.
The Funai Foundation for Information Technology:
https://funaifoundation.jp/grantees/awardees_up_to_now.html